| Type of powder material |
| Y₂O₃ ceramic yttria powder semiconductor spherical |
| brand (PZ) |
| PZ- 6035A |
| specifications (um) |
| –53 +15 –106 +16 |
| Performance and application |
| Plasma etch and erosion resistance on surfaces exposed to reactive plasma gases in semiconductor manufacturing systems, such as vacuum chamber walls and other components Electrostatic chucks Linings for graphite molds |
| Y₂0₃ | 99.5 |
| Fe₂0₃ | <0.1% |
| Al₂0₃ | <0.1% |
| Ca0 | <0.1% |
| Si0₂ | < 0.1% |
| Plasmagenerator | F4 |
| Plasma Gas Ar(SLPM) | 42 |
| Plasma Gas H₂(SLPM) | 11 |
| Current(A) | 550 |
| Spray Distnce(mm) | 120 |
